A technique for quantitative determination of the profile of the residual stress along the depth of p silicon films
نویسندگان
چکیده
A quantitative method to determine the profile of the residual stress along the depth of a highly boron doped silicon film is reported. First, the stress profile relative to the stress at the neutral surface of the film is obtained by measuring deflection of p silicon cantilevers with different etch depths. Second, the average of the residual stress is obtained by using a rotating beam structure. The stress profile is determined completely from these two calculations. One example of application by this method illustrates that most of the p region is subjected to the tensile stress except for the region near the front surface. © 1995 American Institute of Physics.
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